smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features very high dc current gain:h fe =500 to 1600. high v ebo voltage:v ebo =-10v absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -10 v collector current i c -150 ma total power dissipation at 25 ambient temperature junction temperature t j 150 storage temperature t stg -55to+150 p t 200 mw electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =-25v,i e = 0 -100 na emitter cutoff current i ebo v eb =-7v,i c = 0 -100 na dc current gain * h fe v ce =-5v,i c = -1 ma 500 1000 1600 base-emitter voltage * v be v ce =-5v,i c = -1 ma -580 mv collector-emitter saturation voltage * v ce(sat) i c = -50ma , i b = -5ma -0.15 -0.3 v base-emitter saturation voltage * v be(sat) i c = -50ma , i b = -5ma -0.8 -1.2 v gain bandwidth product f t v ce =-5v,i e = 10ma 200 mhz output capacitance c ob v cb =-5v,i e =0,f=1.0mhz 4.6 pf turn-on time t on v cc = -10v , v be(off) = 2.7v , 0.12 ns storage time t stg i c = -50ma , 0.58 ns turn-off time t off i b1 =-i b2 =-1ma 0.75 ns *pw 350s,duty cycle 2% h fe classification marking m15 m16 hfe 500 1000 800 1600 2 s a 1 4 1 1 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors product specification 4008-318-123
|
